ALD 2014 [14th International Conference on Atomic Layer Deposition] June 15-18, 2014 Kyoto, Japan

Important dates

Online Abstract Submission Open : January 6, 2014
Deadline for Abstract : February 14, 2014    February 28, 2014
Online Early Registration & Hotel Accommodation Open : March 20, 2014
Notification of Acceptance and Tentative Program Issue : April 8, 2014
Notification of acceptance was sent on 18:30 17th(JST).
Final decision of your presentation style will be informed again in near future.
Please visit our website continuously to follow our new information.
Deadline for Early Registration : May 8, 2014    May 22, 2014
AVS
ALD Pulse

The AVS Topical Conference on Atomic Layer Deposition 2014 (ALD 2014) will be a three-day meeting, (preceded by one day of tutorials) dedicated to the science and technology of atomic layer controlled deposition of thin films. In every year since 2001 at Monterey, the conference had been held alternatively in United States, Europe, and Asia allowing fruitful exchanges of scientists’ ideas, know-hows, and practices.

Atomic Layer Deposition (ALD) is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications. A unique attribute of ALD is that it uses sequential self-limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer surface thickness regime. ALD is receiving attention for its potential applications from semiconductor leading-edge technologies, advanced microsystems, displays to energy capture and storage, solid state lighting, biotechnologies, and security. ALD is particularly advantageous for any advanced technologies that require control of film structure in the nanometer or sub-nanometer scale.

This conference offers an excellent opportunity to learn about the most recent R&D activities in ALD science and technology from researchers around the world. We look forward to your attendance.

ALD 2014   Co-Chair:   Yukihiro SHIMOGAKI (The University of Tokyo)
Christian DUSSARRAT (Air Liquide Laboratory, Japan)


Conference Overview

Dates

June 15 (Sun) - 18 (Wed), 2014

Venue

Hotel Granvia Kyoto
JR Kyoto Station, Karasuma Chuo-guchi, Shiokoji-Sagaru, Karasumadori, Shimogyo-ku, Kyoto 600-8216 Japan
Tel: +81-(0)75-344-8888 / Fax: +81-(0)75-344-4400

Official Language

English

Keynote Speakers (Confirmed)

  • Ivo J. Raaijmakers (ASM International N.V., Netherland)
      “Atomic Layer Deposition for sub-14nm Semiconductor Roadmap Challenges.”
  • Minoru Kubo (Panasonic Corp., Japan)
      “Novel SiC & GaN Power-devices Evolution towards a Sustainable Energy Future.”

Invited Speakers (Confirmed)

  • Prof. Jiyoung Kim (Univ. Texas at Dallas, USA)
    “Ozone Based ALD”
  • Dr. Scott Clendenning (Intel, USA)
    “New chemical routes into ALD materials and their applications”
  • Dr. Toshihide Nabatame (NIMS, Japan)
    “Characteristics of Higher-k films fabricated by ALD and low annealing temperature process”
  • Prof. Yongfeng Mei (Fudan Univ., China)
    “Atomic layer deposition as a new tool for interdisciplinary research”
  • Nicolas Blasco (Air Liquide Electronics, France)
    “Recent Development of Ligand Chemistries for Next Generation Conformal PEALD / ALD of Metals and Metal Oxides”
  • Scott Clendenning (Intel, USA)
    “Beyond the Comfort Zone: Exploratory Chemistry for New ALD Materials and Applications”
  • Charles Eddy (Naval Research Lab, USA)
    “ALD of III-N Materials”
  • Hongjin Fan (Nanyang Technological Univ., Singapore)
    “ALD and nanomaterials”
  • Masaru Hori (Nagoya Univ., Japan)
    “In-situ analysis of the surface reactions in plasma-enhanced ALD SiO2 film for advanced litho applications”
  • Jiyong Kim (UT Dallas, USA)
    “Ozone based ALD”
  • Soo-Hyun Kim (Yeungnam Univ., Korea Republic of (South Korea))
    “ALD of Ru based materials for Cu metallization”
  • Ham-Bo-Ram Lee (Incheon National Univ., Republic of Korea (South Korea))
    “ALD of noble metals for energy application”
  • Ruud van Ommen (Delft University of Technology)
    “A Reactor for Spatial ALD on particles”
  • Yongfeng Mei (Fudan Univ., China)
    “ALD coating for applications”
  • Andy Sung (Univ. of Western Ontario, Canada)
    “Designing Surface and Interface of Electrodes by ALD for Highly-stable Li Ion Butteries”
  • Dave Thompson (Applied Materials, USA)
    “Progress in rational ALD design for semiconductor high volume manufacturing”

Committee Members

Co-Chairs

Yukihiro Shimogaki (The University of Tokyo, Japan)
Christian Dussarrat (Air Liquide Laboratory, Japan)

Technical Program Committee

Parag Banerjee (Washington University, USA)
Iain Buchanan (Air Products, UK)
Scott Clendenning (Intel, USA)
Annelies Delabie (IMEC, Belgium)
Christophe Detavernier (University of Ghent, Belgium)
Charles Dezelah (Picosun USA LLC, USA)
Simon Elliott (Tyndall National Institute, Ireland)
Neil Dasgupta (University of Michigan, USA)
Ravi Kanjolia (SAFC Hitech, USA)
Hyungjun Kim (Yonsei University, Korea)
Mato Knez (Nanogune, Spain)
Harm Knoops (Oxford Instruments, UK)
Won-Jun Lee (Sejong University, Korea)
Han-Jin Lim (Samsung Electronics, Korea)
Toshihide Nabatame (NIMS, Japan)
Kornelius Nielsch (University of Hamburg, Germany)
Ola Nilsen (University of Oslo, Norway)
Dea-Gyu Park (IBM, USA)
Nicola Pinna (Humboldt-Universitat zu Berlin, Germany)
Paul Poodt (TNO/Holst Center, The Netherlands)
Matti Putkonen (Beneq Oy, Finland)
Uwe Schroeder (Namlab, Germany)
Yoshi Senzaki (USA)
Ganesh Sundaram (Ultratech, USA)
Christophe Vallee (LETI-LTM, France)
Xudong Wang (University of Wisconsin-Madison, USA)
Takanobu Watanabe (Waseda University, Japan)
Virginia Wheeler (U.S. Naval Research Laboratory, USA)
Charles Winter (Wayne State University, USA)
Peide (Peter) Ye (Purdue University, USA)

International Advisory Committee

Yves Chabal (University of Texas at Dallas, USA)
Jeffrey Elam (Argonne National Laboratory, USA)
Steven M. George (University of Colorado at Boulder, USA)
Roy Gordon (Harvard University, USA)
Suvi Haukka (ASM, Finland)
Cheol Seong Hwang (Seoul National University, Korea)
Hyeongtag Jeon (Hanyang University, Korea)
Erwin Kessels (University of Eindhoven, The Netherlands)
Jiyoung Kim (University of Texas at Dallas, USA)
Sang-In Lee (Veeco ALD, USA)
Markku Leskelä (University of Helsinki, Finland)
Paul Ma (Applied Materials, USA)
Gregory N. Parsons (North Carolina State University, USA)
Shi-Woo Rhee (POSTECH, Korea)
Mikko Ritala (University of Helsinki, Finland)
Stephen Rossnagel (IBM, USA)
Gary Rubloff (Maryland NanoCenter, USA)

Local Organizing Committee

Daisuke Hojo (Tohoku University, Japan)
Masao Inoue (Renesas Electronics, Japan)
Masato Kawakami (Tokyo Electron, Japan)
Motoaki Kawase (Kyoto University, Japan)
Nobuyoshi Kobayashi (Japan ASM, Japan)
Masato Miyake (NAIST, Japan)
Norifusa Satoh (NIMS, Japan)
Hideharu Shimizu (Taiyo Nippon Sanso, Japan)
Masayuki Tanaka (Toshiba, Japan)
Jiro Yugami (Hitachi Kokusai Electric, Japan)
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